United States GaN Power Devices Market By Device Type (Power, RF Power), By Voltage Range (<200 Volt, 200-600 Volt, >600 Volt), By Application (Power Drivers, Supply & Inverter, Radio Frequency), By End User (Telecommunication, Industrial, Automotive, Renewables, Consumer, Defense & Aerospace, Healthcare), By Region, Competition, Forecast and Opportunities, 2021-2031F

Forecast Period	2027-2031
Market Size (2025)	USD 121.86 Million
CAGR (2026-2031)	6.77%
Fastest Growing Segment	Power Drivers
Largest Market	Northeast
Market Size (2031)	USD 180.53 Million

Market Overview

The United States GaN Power Devices Market will grow from USD 121.86 Million in 2025 to USD 180.53 Million by 2031 at a 6.77% CAGR. Gallium Nitride (GaN) power devices are wide-bandgap semiconductors that offer superior electron mobility, enabling higher energy efficiency, faster switching frequencies, and greater thermal management compared to legacy silicon components. The expansion of the United States market is fundamentally driven by the critical need for power density in hyperscale data centers, the rapid deployment of electric vehicle charging infrastructure, and the consumer requirement for compact, fast-charging electronics. These core drivers create a sustained demand for advanced power regulation that distinct market trends, such as vertical integration, aim to satisfy. To support this trajectory, the regional manufacturing base is expanding; according to SEMI, in 2024, semiconductor manufacturing capacity in the Americas region was forecast to increase by 6% year-over-year.

Despite this robust outlook, a significant challenge impeding broader market expansion is the high fabrication cost relative to silicon-based alternatives. The complexity of producing defect-free GaN substrates currently sustains a price premium that restricts mass adoption in cost-sensitive applications, necessitating further maturity in economies of scale to achieve price parity.

Key Market Drivers

The surge in demand for high-efficiency data center power supplies is fundamentally reshaping the market, driven by the exponential growth of artificial intelligence and hyperscale computing. As data center operators grapple with skyrocketing energy density requirements, there is a critical transition from legacy silicon to Gallium Nitride (GaN) solutions to minimize power loss and reduce cooling overhead. This intensification of energy needs is substantial; according to the Electric Power Research Institute (EPRI), May 2024, in the 'Powering Intelligence' report, United States data centers are projected to consume up to 9% of the nation's total electricity generation by 2030, a scenario that mandates the mass adoption of ultra-efficient wide-bandgap semiconductors to ensure grid reliability.

Accelerated electric vehicle adoption and automotive power electronics further propel the industry, particularly through the integration of GaN in onboard chargers and DC-DC converters to enhance range and reduce weight. Manufacturers are rapidly validating GaN for intermediate voltage applications, such as the emerging 48V zonal architecture standard, to replace heavier mechanical systems. For instance, according to Navitas Semiconductor, November 2024, in their 'Q3 2024 Financial Results', the company launched a specialized GaN platform optimized for 48V electric vehicle battery systems and secured six new automotive charger design wins. Supporting this technological shift is a robust domestic manufacturing push; according to the Semiconductor Industry Association, in 2024, the United States is forecast to more than triple its domestic semiconductor fabrication capacity over the next decade, providing the essential local supply chain to meet these soaring automotive and industrial demands.

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Key Market Challenges

The high fabrication cost of Gallium Nitride (GaN) relative to silicon-based alternatives currently acts as a substantial restraint on market growth. Producing defect-free GaN substrates involves complex, energy-intensive processes that result in lower yields compared to mature silicon manufacturing. This technical difficulty translates into a significant price premium, which limits the technology's penetration into cost-sensitive applications where the marginal efficiency gains do not yet justify the higher upfront expense. Consequently, mass adoption in consumer electronics and broader industrial sectors is slowed as manufacturers often delay transition until prices align more closely with legacy components.

This cost disparity is exacerbated by the immense economies of scale already enjoyed by the incumbent silicon industry, which continues to aggressively expand its manufacturing footprint. The GaN sector must compete against this entrenched infrastructure while attempting to build its own production volume to lower unit costs. According to SEMI, in 2024, the Americas region was projected to invest $63 billion in 300mm fab equipment between 2025 and 2027. This massive capital allocation toward established silicon-compatible platforms highlights the magnitude of the competitive environment GaN developers face in their efforts to achieve price parity within the United States market.

Key Market Trends

The expansion of radiation-hardened portfolios for aerospace and defense is becoming a defining trend as the United States intensifies its focus on resilient space-grade electronics. This shift addresses the stringent reliability requirements of military satellites and deep-space missions, where components must survive extreme radiation levels without performance degradation. Manufacturers are increasingly securing rigorous military certifications to validate their devices for these critical applications, moving beyond commercial-grade adaptations to support the strategic necessities of the Space Force and private constellations. For example, according to Infineon Technologies, June 2025, in the 'Infineon's Rad-Hard GaN Transistors Cleared for Space and Defense' announcement, the company released the industry's first radiation-hardened GaN power transistor fully qualified to the United States Defense Logistics Agency's JANS specification, featuring a total ionizing dose tolerance of 500 kRad(Si).

Simultaneously, the commercialization of monolithic bidirectional GaN switches is emerging as a technological breakthrough, specifically enhancing efficiency in energy storage and electric vehicle applications. This innovation replaces complex arrangements of back-to-back silicon MOSFETs with a single compact device, significantly reducing component count and conduction losses in systems requiring two-way power flow, such as vehicle-to-grid chargers and solar inverters. This architecture is rapidly moving from development to mass production to meet the demand for higher power density in renewable energy infrastructure. According to Navitas Semiconductor, May 2025, in the 'Navitas Unveils Bidirectional GaN Switches for Solar and EV Applications' press release, the company introduced the industry's first production 650V bidirectional GaN power switch, designed to enable single-stage power conversion in electric vehicle onboard chargers.

Segmental Insights

The Power Drivers segment constitutes the fastest growing category within the United States GaN power devices market due to the critical role these components play in high frequency switching applications. This expansion is fueled by the rising demand for compact and efficient power supplies in consumer electronics and telecommunications. Integrated power drivers are required to optimize the performance of GaN technology by ensuring precise gate control and stability. Additionally, strict efficiency standards established by the United States Department of Energy incentivize the adoption of robust driver solutions to minimize power loss in modern electrical infrastructure.

Regional Insights

The Northeast United States stands as the leading region in the United States GaN Power Devices Market, driven by a strategic ecosystem of government-backed initiatives and industrial collaboration. This dominance is anchored by the Northeast Microelectronics Coalition, which actively accelerates the development of wide-bandgap semiconductor technologies. Furthermore, the federally designated Vermont Gallium Nitride Tech Hub serves as a central engine for innovation, uniting the research capabilities of the University of Vermont with the advanced manufacturing infrastructure of GlobalFoundries. This cohesive network enables the region to spearhead the production of high-performance power solutions for critical defense and commercial applications.

Recent Developments

• In December 2025, Onsemi announced a strategic collaboration with GlobalFoundries to develop and manufacture advanced gallium nitride power devices, starting with 650-volt products. This partnership combined Onsemi's expertise in system design and drivers with GlobalFoundries' 200mm gallium nitride-on-silicon manufacturing process. The companies aimed to deliver smaller, more efficient power solutions optimized for artificial intelligence data centers, electric vehicles, and renewable energy systems. The agreement focused on accelerating the roadmap for high-performance power stages and ensuring a scalable supply chain to meet the rising global demand for energy-efficient semiconductor technologies, with volume production expected to scale rapidly.
• In May 2025, Navitas Semiconductor launched a 12-kilowatt power platform combining gallium nitride and silicon carbide technologies to achieve high efficiency for hyperscale artificial intelligence data centers. The new platform was designed to meet the rigorous Open Compute Project requirements for high-power and high-density server racks. By utilizing this next-generation power architecture, the company aimed to support the escalating energy demands of AI infrastructure while reducing power losses. This development underscored the increasing role of wide-bandgap semiconductors in enabling sustainable and efficient power delivery for data-intensive computing environments, achieving significant efficiency benchmarks for the industry.
• In June 2024, Texas Instruments introduced the industry's first 650-volt three-phase gallium nitride intelligent power module intended for 250-watt motor drive applications. The new module integrated the company's GaN technology to achieve over 99 percent inverter efficiency and reduce solution size by up to 55 percent for major home appliances and heating, ventilation, and air-conditioning systems. By eliminating the need for an external heat sink, the device allowed engineers to optimize acoustic performance and lower system costs. This innovation targeted the growing demand for energy-efficient and compact motor driver systems in the industrial and consumer electronics sectors.
• In February 2024, Efficient Power Conversion introduced the EPC2361, a 100-volt, 1-milliohm gallium nitride field-effect transistor designed to enhance power density for diverse applications. The new device featured a thermally enhanced QFN package with a compact 3 mm by 5 mm footprint, offering significantly lower on-resistance compared to previous generations. This launch aimed to address the efficiency requirements of high-frequency DC-DC conversion in data centers, motor drives for robotics and mobility, and solar power optimizers. The company highlighted that the component enabled designers to create more compact and reliable power electronics systems by replacing traditional silicon MOSFETs.

Key Market Players

• International Rectifier Corporation
• Infineon Technologies Ag
• Texas Instruments Incorporated
• On Semiconductor Corporation
• Qorvo, Inc.
• Transphorm, Inc.
• Wolfspeed, Inc.
• NXP Semiconductors N.V.
• Amphenol Corporation
• Analog Devices Inc

By Device Type	By Voltage Range	By Application	By End User	By Region
Power RF Power	<200 Volt 200-600 Volt >600 Volt	Power Drivers Supply & Inverter Radio Frequency	Telecommunication Industrial Automotive Renewables Consumer Defense & Aerospace Healthcare	Northeast Midwest South West

Report Scope:

In this report, the United States GaN Power Devices Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:

• United States GaN Power Devices Market, By Device Type:

• Power
• RF Power

• United States GaN Power Devices Market, By Voltage Range:

• <200 Volt
• 200-600 Volt
• >600 Volt

• United States GaN Power Devices Market, By Application:

• Power Drivers
• Supply & Inverter
• Radio Frequency

• United States GaN Power Devices Market, By End User:

• Telecommunication
• Industrial
• Automotive
• Renewables
• Consumer
• Defense & Aerospace
• Healthcare

• United States GaN Power Devices Market, By Region:

• Northeast
• Midwest
• South
• West