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Report Description

Report Description

Forecast Period

2026-2030

Market Size (2024)

USD 3.64 Billion

CAGR (2025-2030)

30.44%

Fastest Growing Segment

SiC Bare Die Devices

Largest Market

Asia Pacific

Market Size (2030)

USD 17.93 Billion

Market Overview

The Global SiC Power Semiconductor Market, valued at USD 3.64 Billion in 2024, is projected to experience a CAGR of 30.44% to reach USD 17.93 Billion by 2030. Silicon Carbide (SiC) power semiconductors are wide bandgap materials, fundamentally composed of silicon and carbon, engineered to deliver superior electrical and thermal performance compared to traditional silicon-based devices, facilitating higher voltage handling, faster switching speeds, and operation at elevated temperatures. The market for these advanced semiconductors is primarily driven by the escalating demand for energy-efficient solutions across diverse sectors. Significant impetus comes from the rapid proliferation of electric vehicles, necessitating efficient power conversion systems, and the expansion of renewable energy infrastructure. According to Wolfspeed Inc. , a leading manufacturer in the sector, its total revenue, encompassing SiC materials and power devices, reached $921.9 million for fiscal year 2023.

Further market growth is supported by increasing adoption in industrial automation and advanced telecommunications infrastructure. However, market expansion faces a notable challenge concerning manufacturing costs, as the production of SiC devices remains more capital intensive than that of conventional silicon components.

Key Market Drivers

The expanding adoption of electric vehicles represents a pivotal driver for the global silicon carbide power semiconductor market. SiC devices deliver superior power efficiency and thermal management essential for high-voltage systems in modern electric vehicles, facilitating extended driving ranges, faster charging, and reduced system size and weight for components like traction inverters and onboard chargers. This electrification directly correlates with the demand for robust power electronics. According to the International Energy Agency's "Global Electric Vehicle Outlook 2024", in April 2024, global electric vehicle sales were projected to reach approximately 17 million by the end of 2024, underscoring the substantial market for advanced semiconductor solutions.

The growth in renewable energy integration also serves as a significant market driver, particularly in solar and wind power systems. SiC power semiconductors enhance the efficiency and reliability of power conversion inverters central to these installations, minimizing energy losses during direct current to alternating current conversion and improving overall system performance. This efficiency is crucial for maximizing power harvest from intermittent renewable sources. According to SolarPower Europe's "Global Market Outlook for Solar Power 2025-2029", in May 2025, global solar installations reached nearly 600 GW in 2024, marking a 33% increase over the prior year, highlighting a substantial market for SiC integration. Overall, the robust performance of leading manufacturers underscores this momentum; according to Infineon's financial report, in November 2024, for the fiscal year 2024, silicon carbide revenue reached 650 million euros, an increase of over 30%, reflecting sustained market expansion.


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Key Market Challenges

The high manufacturing cost associated with Silicon Carbide (SiC) power semiconductors presents a significant impediment to the broader adoption and overall growth of the market. The production of SiC devices requires more capital-intensive processes compared to established silicon-based components, leading to higher unit costs for SiC power semiconductors. This elevated cost structure directly affects the pricing of end products, making SiC solutions less economically attractive for various applications where performance benefits do not sufficiently outweigh the increased initial investment.

This cost disparity results in a constrained market share for SiC. According to SEMI, in 2023, wide bandgap devices, which include SiC, accounted for less than 10% of the total $26 billion USD power devices market. While SiC offers superior electrical and thermal performance, the substantial investment in manufacturing facilities and the inherent complexities of SiC material growth and processing contribute to its higher price point. This economic barrier limits market penetration, particularly in cost-sensitive sectors, thereby hindering the expansion of the global SiC power semiconductor market despite its technical advantages.

Key Market Trends

The transition to larger diameter SiC wafers represents a significant trend in the global SiC power semiconductor market, primarily driven by the imperative to enhance manufacturing efficiency and reduce per-die costs. Moving from 6-inch to 8-inch wafers allows for a greater number of chips to be produced from a single wafer, thereby increasing output and improving economies of scale. According to SEMI, in February 2024, 200mm fab capacity for power and automotive semiconductors is projected to increase by 34% between 2023 and 2026. This scaling is crucial for meeting the escalating demand for SiC devices across various high-power applications. As a testament to this trend, Infineon officially opened the first phase of its new 200mm, or 8-inch, SiC power semiconductor fab in Kulim, Malaysia, on August 8, 2024, with large-scale production anticipated by 2025. This expansion is designed to establish the facility as the world's largest and most competitive 200mm SiC power semiconductor fabrication plant.

Another pivotal trend is the broadening SiC application portfolio into new sectors, extending beyond the established domains of electric vehicles and renewable energy. As SiC technology matures and its benefits become more widely recognized, new industries are integrating these advanced semiconductors to achieve higher efficiency and performance. According to SEMI, in April 2024, data centers and 5G communications were identified as SiC market drivers that are gaining strength. This highlights the diversification of SiC technology into critical digital infrastructure. Furthermore, Mitsubishi Electric, in May 2024, emphasized the deployment of SiC power modules in advanced applications such as satellite communications, 5G base stations, millimeter wave radar, optical fiber communication, and data centers, showcasing an expanding reach into high-frequency and high-density power management environments. This trend indicates a robust market expansion as SiC devices address the unique power demands of an increasingly digitized and interconnected world.

Segmental Insights

The SiC Bare Die Devices segment is experiencing rapid growth within the Global SiC Power Semiconductor Market, primarily due to the superior inherent material advantages of silicon carbide over traditional silicon. SiC bare dies offer significantly higher breakdown voltage, enhanced thermal conductivity, and faster switching speeds, which collectively enable the development of more efficient, compact, and reliable power electronic systems. This accelerated growth is largely fueled by the escalating demand from the electric vehicle sector, where SiC devices are critical for optimizing powertrain efficiency, extending driving range, and reducing charging times. Furthermore, the expanding renewable energy industry increasingly adopts SiC bare dies to enhance power conversion efficiency in applications such as solar inverters and wind turbines.

Regional Insights

Asia Pacific stands as the leading region in the global SiC power semiconductor market. This dominance is driven by a robust semiconductor manufacturing ecosystem and substantial investments in development and production capabilities across countries like China, Japan, and South Korea. The region also leads in the widespread adoption of electric vehicles, a primary application for SiC devices that enhance efficiency in powertrains and charging infrastructure. Furthermore, expanding renewable energy installations and supportive government initiatives promoting electrification and energy efficiency contribute significantly to the high demand for SiC power semiconductors in Asia Pacific. .

Recent Developments

  • In May 2025, Infineon announced a breakthrough in SiC technology with its new trench-based SiC superjunction (TSJ) technology. This innovative development merged the attributes of the company's CoolSiC platform with its proven CoolMOS superjunction silicon technology. The TSJ technology represented a significant leap in power density and performance for the SiC Power Semiconductor Market, offering up to 40% higher power density through drastically improved specific on-resistance and up to 25% higher output current in inverter systems.

  • In September 2024, STMicroelectronics unveiled its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, representing a significant advancement for the Global SiC Power Semiconductor Market. This technology was designed to deliver enhanced power efficiency, density, and robustness across various applications, with a particular focus on electric vehicle traction inverters. The new SiC MOSFETs aim to improve energy efficiency and performance in both 400V and 800V platforms. Qualification for the 750V class was completed, and the 1200V class was expected to be qualified in the first quarter of 2025.

  • In June 2024, onsemi announced its intention to establish a state-of-the-art, vertically integrated silicon carbide (SiC) manufacturing facility in the Czech Republic, involving an investment of up to $2 billion. This strategic move aimed to bolster the global SiC power semiconductor supply chain and meet the increasing demand for intelligent power semiconductors. The facility was designed to produce SiC devices crucial for improving energy efficiency in electric vehicles, renewable energy systems, and AI data centers, strengthening the company's leadership in intelligent power solutions.

  • In May 2024, Infineon Technologies launched its new CoolSiC MOSFET 400 V family, expanding its portfolio of SiC power semiconductors. Based on the company's second-generation CoolSiC technology, these devices were specifically developed for the demanding AC/DC stages of AI server power supplies. They also found application in solar and energy storage systems, inverter motor control, and industrial power supplies. The new MOSFETs featured ultra-low conduction and switching losses compared to existing 650 V SiC and silicon MOSFETs, enabling higher power density and efficiency in advanced AI applications.

Key Market Players

  • SMART Global Holdings, Inc.
  • ROHM Co., Ltd.
  • Infineon Technologies AG
  • Semiconductor Components Industries, LLC
  • STMicroelectronics International N.V.
  • Microchip Technology Inc.
  • Littelfuse, Inc.
  • Texas instruments Incorporated
  • NXP semiconductors N.V.
  • Fuji Electric Co., Ltd.

By Devices

By Application

By End-User

By Region

  • SiC Discrete Devices
  • SiC Bare Die Devices
  • RF Devices & Cellular Base Station
  • Power Supply & Inverter
  • Power Grids
  • EV Motor
  • Industrial Motor Drives
  • Railway Traction
  • Others
  • Telecommunication
  • Energy & Power
  • Automotive
  • Industrial
  • Electronics
  • Others
  • North America
  • Europe
  • Asia Pacific
  • South America
  • Middle East & Africa
  • Report Scope:

    In this report, the Global SiC Power Semiconductor Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:

    • SiC Power Semiconductor Market, By Devices:

    o   SiC Discrete Devices

    o   SiC Bare Die Devices

    • SiC Power Semiconductor Market, By Application:

    o   RF Devices & Cellular Base Station

    o   Power Supply & Inverter

    o   Power Grids

    o   EV Motor

    o   Industrial Motor Drives

    o   Railway Traction

    o   Others

    • SiC Power Semiconductor Market, By End-User:

    o   Telecommunication

    o   Energy & Power

    o   Automotive

    o   Industrial

    o   Electronics

    o   Others

    • SiC Power Semiconductor Market, By Region:

    o   North America

    §  United States

    §  Canada

    §  Mexico

    o   Europe

    §  France

    §  United Kingdom

    §  Italy

    §  Germany

    §  Spain

    o   Asia Pacific

    §  China

    §  India

    §  Japan

    §  Australia

    §  South Korea

    o   South America

    §  Brazil

    §  Argentina

    §  Colombia

    o   Middle East & Africa

    §  South Africa

    §  Saudi Arabia

    §  UAE

    Competitive Landscape

    Company Profiles: Detailed analysis of the major companies presents in the Global SiC Power Semiconductor Market.

    Available Customizations:

    Global SiC Power Semiconductor Market report with the given market data, TechSci Research offers customizations according to a company's specific needs. The following customization options are available for the report:

    Company Information

    • Detailed analysis and profiling of additional market players (up to five).

    Global SiC Power Semiconductor Market is an upcoming report to be released soon. If you wish an early delivery of this report or want to confirm the date of release, please contact us at [email protected]

    Table of content

    Table of content

    1.    Product Overview

    1.1.  Market Definition

    1.2.  Scope of the Market

    1.2.1.  Markets Covered

    1.2.2.  Years Considered for Study

    1.2.3.  Key Market Segmentations

    2.    Research Methodology

    2.1.  Objective of the Study

    2.2.  Baseline Methodology

    2.3.  Key Industry Partners

    2.4.  Major Association and Secondary Sources

    2.5.  Forecasting Methodology

    2.6.  Data Triangulation & Validation

    2.7.  Assumptions and Limitations

    3.    Executive Summary

    3.1.  Overview of the Market

    3.2.  Overview of Key Market Segmentations

    3.3.  Overview of Key Market Players

    3.4.  Overview of Key Regions/Countries

    3.5.  Overview of Market Drivers, Challenges, Trends

    4.    Voice of Customer

    5.    Global SiC Power Semiconductor Market Outlook

    5.1.  Market Size & Forecast

    5.1.1.  By Value

    5.2.  Market Share & Forecast

    5.2.1.  By Devices (SiC Discrete Devices, SiC Bare Die Devices)

    5.2.2.  By Application (RF Devices & Cellular Base Station, Power Supply & Inverter, Power Grids, EV Motor, Industrial Motor Drives, Railway Traction, Others)

    5.2.3.  By End-User (Telecommunication, Energy & Power, Automotive, Industrial, Electronics, Others)

    5.2.4.  By Region

    5.2.5.  By Company (2024)

    5.3.  Market Map

    6.    North America SiC Power Semiconductor Market Outlook

    6.1.  Market Size & Forecast

    6.1.1.  By Value

    6.2.  Market Share & Forecast

    6.2.1.  By Devices

    6.2.2.  By Application

    6.2.3.  By End-User

    6.2.4.  By Country

    6.3.    North America: Country Analysis

    6.3.1.    United States SiC Power Semiconductor Market Outlook

    6.3.1.1.  Market Size & Forecast

    6.3.1.1.1.  By Value

    6.3.1.2.  Market Share & Forecast

    6.3.1.2.1.  By Devices

    6.3.1.2.2.  By Application

    6.3.1.2.3.  By End-User

    6.3.2.    Canada SiC Power Semiconductor Market Outlook

    6.3.2.1.  Market Size & Forecast

    6.3.2.1.1.  By Value

    6.3.2.2.  Market Share & Forecast

    6.3.2.2.1.  By Devices

    6.3.2.2.2.  By Application

    6.3.2.2.3.  By End-User

    6.3.3.    Mexico SiC Power Semiconductor Market Outlook

    6.3.3.1.  Market Size & Forecast

    6.3.3.1.1.  By Value

    6.3.3.2.  Market Share & Forecast

    6.3.3.2.1.  By Devices

    6.3.3.2.2.  By Application

    6.3.3.2.3.  By End-User

    7.    Europe SiC Power Semiconductor Market Outlook

    7.1.  Market Size & Forecast

    7.1.1.  By Value

    7.2.  Market Share & Forecast

    7.2.1.  By Devices

    7.2.2.  By Application

    7.2.3.  By End-User

    7.2.4.  By Country

    7.3.    Europe: Country Analysis

    7.3.1.    Germany SiC Power Semiconductor Market Outlook

    7.3.1.1.  Market Size & Forecast

    7.3.1.1.1.  By Value

    7.3.1.2.  Market Share & Forecast

    7.3.1.2.1.  By Devices

    7.3.1.2.2.  By Application

    7.3.1.2.3.  By End-User

    7.3.2.    France SiC Power Semiconductor Market Outlook

    7.3.2.1.  Market Size & Forecast

    7.3.2.1.1.  By Value

    7.3.2.2.  Market Share & Forecast

    7.3.2.2.1.  By Devices

    7.3.2.2.2.  By Application

    7.3.2.2.3.  By End-User

    7.3.3.    United Kingdom SiC Power Semiconductor Market Outlook

    7.3.3.1.  Market Size & Forecast

    7.3.3.1.1.  By Value

    7.3.3.2.  Market Share & Forecast

    7.3.3.2.1.  By Devices

    7.3.3.2.2.  By Application

    7.3.3.2.3.  By End-User

    7.3.4.    Italy SiC Power Semiconductor Market Outlook

    7.3.4.1.  Market Size & Forecast

    7.3.4.1.1.  By Value

    7.3.4.2.  Market Share & Forecast

    7.3.4.2.1.  By Devices

    7.3.4.2.2.  By Application

    7.3.4.2.3.  By End-User

    7.3.5.    Spain SiC Power Semiconductor Market Outlook

    7.3.5.1.  Market Size & Forecast

    7.3.5.1.1.  By Value

    7.3.5.2.  Market Share & Forecast

    7.3.5.2.1.  By Devices

    7.3.5.2.2.  By Application

    7.3.5.2.3.  By End-User

    8.    Asia Pacific SiC Power Semiconductor Market Outlook

    8.1.  Market Size & Forecast

    8.1.1.  By Value

    8.2.  Market Share & Forecast

    8.2.1.  By Devices

    8.2.2.  By Application

    8.2.3.  By End-User

    8.2.4.  By Country

    8.3.    Asia Pacific: Country Analysis

    8.3.1.    China SiC Power Semiconductor Market Outlook

    8.3.1.1.  Market Size & Forecast

    8.3.1.1.1.  By Value

    8.3.1.2.  Market Share & Forecast

    8.3.1.2.1.  By Devices

    8.3.1.2.2.  By Application

    8.3.1.2.3.  By End-User

    8.3.2.    India SiC Power Semiconductor Market Outlook

    8.3.2.1.  Market Size & Forecast

    8.3.2.1.1.  By Value

    8.3.2.2.  Market Share & Forecast

    8.3.2.2.1.  By Devices

    8.3.2.2.2.  By Application

    8.3.2.2.3.  By End-User

    8.3.3.    Japan SiC Power Semiconductor Market Outlook

    8.3.3.1.  Market Size & Forecast

    8.3.3.1.1.  By Value

    8.3.3.2.  Market Share & Forecast

    8.3.3.2.1.  By Devices

    8.3.3.2.2.  By Application

    8.3.3.2.3.  By End-User

    8.3.4.    South Korea SiC Power Semiconductor Market Outlook

    8.3.4.1.  Market Size & Forecast

    8.3.4.1.1.  By Value

    8.3.4.2.  Market Share & Forecast

    8.3.4.2.1.  By Devices

    8.3.4.2.2.  By Application

    8.3.4.2.3.  By End-User

    8.3.5.    Australia SiC Power Semiconductor Market Outlook

    8.3.5.1.  Market Size & Forecast

    8.3.5.1.1.  By Value

    8.3.5.2.  Market Share & Forecast

    8.3.5.2.1.  By Devices

    8.3.5.2.2.  By Application

    8.3.5.2.3.  By End-User

    9.    Middle East & Africa SiC Power Semiconductor Market Outlook

    9.1.  Market Size & Forecast

    9.1.1.  By Value

    9.2.  Market Share & Forecast

    9.2.1.  By Devices

    9.2.2.  By Application

    9.2.3.  By End-User

    9.2.4.  By Country

    9.3.    Middle East & Africa: Country Analysis

    9.3.1.    Saudi Arabia SiC Power Semiconductor Market Outlook

    9.3.1.1.  Market Size & Forecast

    9.3.1.1.1.  By Value

    9.3.1.2.  Market Share & Forecast

    9.3.1.2.1.  By Devices

    9.3.1.2.2.  By Application

    9.3.1.2.3.  By End-User

    9.3.2.    UAE SiC Power Semiconductor Market Outlook

    9.3.2.1.  Market Size & Forecast

    9.3.2.1.1.  By Value

    9.3.2.2.  Market Share & Forecast

    9.3.2.2.1.  By Devices

    9.3.2.2.2.  By Application

    9.3.2.2.3.  By End-User

    9.3.3.    South Africa SiC Power Semiconductor Market Outlook

    9.3.3.1.  Market Size & Forecast

    9.3.3.1.1.  By Value

    9.3.3.2.  Market Share & Forecast

    9.3.3.2.1.  By Devices

    9.3.3.2.2.  By Application

    9.3.3.2.3.  By End-User

    10.    South America SiC Power Semiconductor Market Outlook

    10.1.  Market Size & Forecast

    10.1.1.  By Value

    10.2.  Market Share & Forecast

    10.2.1.  By Devices

    10.2.2.  By Application

    10.2.3.  By End-User

    10.2.4.  By Country

    10.3.    South America: Country Analysis

    10.3.1.    Brazil SiC Power Semiconductor Market Outlook

    10.3.1.1.  Market Size & Forecast

    10.3.1.1.1.  By Value

    10.3.1.2.  Market Share & Forecast

    10.3.1.2.1.  By Devices

    10.3.1.2.2.  By Application

    10.3.1.2.3.  By End-User

    10.3.2.    Colombia SiC Power Semiconductor Market Outlook

    10.3.2.1.  Market Size & Forecast

    10.3.2.1.1.  By Value

    10.3.2.2.  Market Share & Forecast

    10.3.2.2.1.  By Devices

    10.3.2.2.2.  By Application

    10.3.2.2.3.  By End-User

    10.3.3.    Argentina SiC Power Semiconductor Market Outlook

    10.3.3.1.  Market Size & Forecast

    10.3.3.1.1.  By Value

    10.3.3.2.  Market Share & Forecast

    10.3.3.2.1.  By Devices

    10.3.3.2.2.  By Application

    10.3.3.2.3.  By End-User

    11.    Market Dynamics

    11.1.  Drivers

    11.2.  Challenges

    12.    Market Trends & Developments

    12.1.  Merger & Acquisition (If Any)

    12.2.  Product Launches (If Any)

    12.3.  Recent Developments

    13.    Global SiC Power Semiconductor Market: SWOT Analysis

    14.    Porter's Five Forces Analysis

    14.1.  Competition in the Industry

    14.2.  Potential of New Entrants

    14.3.  Power of Suppliers

    14.4.  Power of Customers

    14.5.  Threat of Substitute Products

    15.    Competitive Landscape

    15.1.  SMART Global Holdings, Inc.

    15.1.1.  Business Overview

    15.1.2.  Products & Services

    15.1.3.  Recent Developments

    15.1.4.  Key Personnel

    15.1.5.  SWOT Analysis

    15.2.  ROHM Co., Ltd.

    15.3.  Infineon Technologies AG

    15.4.  Semiconductor Components Industries, LLC

    15.5.  STMicroelectronics International N.V.

    15.6.  Microchip Technology Inc.

    15.7.  Littelfuse, Inc.

    15.8.  Texas instruments Incorporated

    15.9.  NXP semiconductors N.V.

    15.10.  Fuji Electric Co., Ltd.

    16.    Strategic Recommendations

    17.    About Us & Disclaimer

    Figures and Tables

    Frequently asked questions

    Frequently asked questions

    The market size of the Global SiC Power Semiconductor Market was estimated to be USD 3.64 Billion in 2024.

    Asia Pacific is the dominating region in the Global SiC Power Semiconductor Market.

    SiC Bare Die Devices segment is the fastest growing segment in the Global SiC Power Semiconductor Market.

    The Global SiC Power Semiconductor Market is expected to grow at 30.44% between 2025 to 2030.

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