IT & Telecom Non-Volatile Memory Market – Global Industry Size, Share, Trends, Opportunity, and Forecast Segmented By Type (Traditional Non-volatile Memory (Flash Memory, EEPROM, SRAM, and EPROM), By Region, Competition 2021-2031F

Forecast Period	2027-2031
Market Size (2025)	USD 66.37 Billion
CAGR (2026-2031)	13.86%
Fastest Growing Segment	Flash Memory
Largest Market	Asia Pacific
Market Size (2031)	USD 144.61 Billion

Market Overview

The Global IT & Telecom Non-Volatile Memory Market will grow from USD 66.37 Billion in 2025 to USD 144.61 Billion by 2031 at a 13.86% CAGR. Non-Volatile Memory within the IT and telecom sectors refers to semiconductor storage technologies, such as NAND flash, that retain digital data without a continuous power supply and serve as the backbone for enterprise servers and networking hardware. The market is primarily supported by the aggressive expansion of hyperscale data centers and the widespread rollout of 5G infrastructure, both of which necessitate high-density and reliable storage solutions. Additionally, the intensifying demand for low-latency data access in artificial intelligence applications acts as a fundamental catalyst, driving the integration of high-performance memory architectures across telecommunication networks.

According to the Semiconductor Industry Association, in 2024, global sales of memory products increased by 78.9% to reach $165.1 billion. This robust financial performance highlights the sector's pivotal position within the broader technology landscape. However, a significant challenge that could impede future market expansion is the extreme capital intensity and technical complexity associated with scaling advanced 3D NAND manufacturing, which restricts supply elasticity and creates potential bottlenecks during periods of rapid demand surges.

Key Market Drivers

Rapid expansion of hyperscale data centers and the growing integration of Artificial Intelligence (AI) workloads are effectively reshaping the Global IT & Telecom Non-Volatile Memory Market. As enterprise cloud storage needs escalate, data centers are aggressively transitioning to high-density, low-latency Non-Volatile Memory (NVM) solutions, such as enterprise-grade Solid State Drives (SSDs), to manage the throughput required by training large language models. This structural shift is evidenced by the surging financial performance of major storage manufacturers. According to Western Digital, July 2024, in the 'Fiscal Fourth Quarter and Fiscal Year 2024 Financial Results', cloud revenue increased by 89% year-over-year, driven largely by nearline and flash storage deployments. Such growth confirms that modern IT infrastructure demands faster, more reliable memory architectures to process complex algorithms and sustain the exponential generation of digital assets.

Simultaneously, the accelerated deployment of 5G telecommunications infrastructure is creating a critical need for robust embedded storage within networking equipment. The transition to standalone 5G networks necessitates high-speed data buffering and caching at the network edge to minimize latency for real-time applications. This surge in connectivity significantly increases the volume of data that telecom operators must manage and store efficiently. According to Ericsson, June 2024, in the 'Ericsson Mobility Report June 2024', global mobile network data traffic grew by 25% between the first quarter of 2023 and the first quarter of 2024. To support this massive influx of traffic and the associated storage requirements, memory providers are ramping up production capacities. According to Micron Technology, in 2024, the company achieved a fiscal fourth-quarter revenue of $7.75 billion, reflecting strong execution across data center and networking end markets.

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Key Market Challenges

The extreme capital intensity and technical complexity associated with scaling advanced 3D NAND manufacturing create a substantial barrier to the growth of the IT and telecom non-volatile memory market. Developing high-density storage requires immense financial investment in fabrication facilities and specialized equipment, making it difficult for manufacturers to rapidly expand capacity. This rigidity in the supply chain limits supply elasticity, meaning that manufacturers cannot easily increase production volumes during periods of sudden demand from hyperscale data centers or 5G network operators. Consequently, this leads to potential supply bottlenecks that delay critical infrastructure upgrades.

This financial burden is evident in the rising costs of production tools required for next-generation fabrication. According to SEMI, in July 2024, global sales of semiconductor manufacturing equipment were forecast to reach $109 billion for the year. Such high expenditure requirements necessitate cautious capital allocation by memory producers, often resulting in conservative production targets. This environment restricts the availability of memory components needed for enterprise servers and networking hardware, thereby dampening the overall market expansion rate.

Key Market Trends

The shift towards Compute Express Link (CXL) memory pooling solutions is fundamentally altering data center architectures by enabling the disaggregation of DRAM from individual processors. This trend addresses the "memory wall" bottleneck in hyperscale environments, allowing flexible, shared memory resources that can be dynamically allocated to servers based on real-time workload intensity. By decoupling memory from the CPU, enterprises can significantly reduce over-provisioning and lower the total cost of ownership for running memory-intensive artificial intelligence models. According to Samsung Electronics, July 2024, in the media update 'Samsung Planning for CXL 2.0 DRAM Mass Production', the company announced plans to commercialize 256 GB DRAM supporting the CXL 2.0 standard, projecting that this technology will increase the memory capacity available per server by eight to ten times compared to existing legacy architectures.

Simultaneously, the accelerating transition to high-layer 3D and 4D NAND flash architectures is overcoming physical scaling limitations to meet the density requirements of modern storage arrays. Manufacturers are increasingly stacking memory cells vertically into hundreds of layers and placing control logic beneath the memory cells—a design often termed 4D NAND—to maximize die efficiency without expanding the chip's footprint. This technical evolution is critical for delivering high-capacity solid-state drives required by edge computing nodes and all-flash enterprise storage. According to SK Hynix, November 2024, in the press release 'SK hynix Begins Mass Production of World’s First 321-Layer NAND Flash', the newly developed 321-layer 4D NAND product delivers a 12% enhancement in data transfer speed and improves manufacturing productivity by 59% compared to the previous generation, enabling more cost-effective scaling for data centers.

Segmental Insights

The Flash Memory segment is currently recognized as the fastest growing category within the Global IT & Telecom Non-Volatile Memory Market due to its essential role in supporting modern data infrastructure. This rapid expansion is primarily driven by the widespread deployment of fifth-generation networks and enterprise data centers that require high-density storage solutions with reliable retention capabilities. Flash memory provides the necessary durability and speed to efficiently manage the substantial data traffic generated by telecom operations. Consequently, the increasing demand for scalable and energy-efficient memory in network equipment continues to drive the significant progress of this segment.

Regional Insights

Asia Pacific maintains a dominant position in the Global IT & Telecom Non-Volatile Memory Market, primarily due to its established infrastructure as a global semiconductor manufacturing powerhouse. Industry assessments highlight that South Korea, China, and Taiwan host critical fabrication facilities for major memory suppliers, ensuring a robust supply chain. This leadership is reinforced by the region's aggressive deployment of 5G networks and the expansion of cloud data centers, which necessitate high-performance storage. Furthermore, strategic government policies promoting domestic semiconductor production have accelerated technological advancements, securing the region's central role in the global market.

Recent Developments

• In December 2025, Micron Technology announced a major strategic shift to discontinue its consumer-focused product line to concentrate exclusively on the enterprise and data center sectors. The company revealed plans to halt shipments of its consumer-branded memory and storage products to reallocate manufacturing capacity toward high-demand solutions for artificial intelligence and server infrastructure. The Chief Business Officer of Micron stated that this decision was driven by the urgent need to support strategic partners amidst a global supply shortage of advanced memory chips. This move underscored the company's commitment to prioritizing the rapidly expanding IT and telecom non-volatile memory markets over retail consumer segments.
• In January 2025, Weebit Nano Limited finalized a strategic commercial agreement to license its Resistive Random-Access Memory (ReRAM) technology to onsemi, a prominent semiconductor supplier. Under this partnership, the company’s non-volatile memory intellectual property was integrated into onsemi’s analog and mixed-signal platform to create embedded memory solutions. The collaboration leveraged the technology’s superior high-temperature retention and low-power characteristics, positioning it as a robust alternative to traditional flash memory. This integration was specifically targeted at enhancing the performance of power management integrated circuits and discrete devices used extensively across the telecommunications, industrial, and automotive markets.
• In October 2024, Kioxia Corporation announced significant research breakthroughs in emerging non-volatile memory technologies aimed at the storage-class memory market. The company detailed the development of a high-capacity Magnetoresistive Random Access Memory (MRAM) solution designed to bridge the performance gap between DRAM and NAND flash. This technology was engineered to handle larger data volumes with faster read and write speeds, making it suitable for next-generation computing systems. Additionally, Kioxia introduced a novel 3D flash memory structure utilizing horizontal cell stacking to improve reliability and bit density, directly supporting the growing storage requirements of global IT infrastructure and data-intensive applications.
• In March 2024, Samsung Electronics unveiled a pioneering hybrid memory solution designed to address the escalating demands of data center and artificial intelligence workloads. During the Memcon conference, the company introduced the CXL Memory Module-Hybrid for Tiered Memory, which integrated both DRAM and non-volatile NAND flash media onto a single add-in card. This innovative architecture was developed to optimize memory management, significantly reduce system downtime, and enhance scheduling efficiency for tiered memory environments. By combining these technologies, Samsung aimed to lower the total cost of ownership for hypervisors and support the scalable, high-performance infrastructure required by modern telecommunications and IT sectors.

Key Market Players

• ROHM Co. Ltd
• STMicroelectronics NV
• Maxim Integrated Products Inc.
• Fujitsu Ltd
• Intel Corporation
• Honeywell International Inc.
• Micron technologies Inc.
• Samsung Electronics Co. Ltd
• Crossbar Inc.
• Infineon Technologies AG

By Type	By Region
Traditional Non-volatile Memory (Flash Memory, EEPROM, SRAM, and EPROM)	North America Europe Asia Pacific South America Middle East & Africa

Report Scope:

In this report, the Global IT & Telecom Non-Volatile Memory Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:

• IT & Telecom Non-Volatile Memory Market, By Type:

• Traditional Non-volatile Memory (Flash Memory, EEPROM, SRAM, and EPROM)

• IT & Telecom Non-Volatile Memory Market, By Region:

• North America
• United States
• Canada
• Mexico
• Europe
• France
• United Kingdom
• Italy
• Germany
• Spain
• Asia Pacific
• China
• India
• Japan
• Australia
• South Korea
• South America
• Brazil
• Argentina
• Colombia
• Middle East & Africa
• South Africa
• Saudi Arabia
• UAE