GaN Power Devices Market - Global Industry Size, Share, Trends, Opportunities, and Forecast Segmented By Device Type (Power Vs RF Power), By Voltage Range (<200 Volt, 200-600 Volt & >600 Volt), By Application (Power Drivers, Supply & Inverter & Radio Frequency), By End User (Telecommunication, Industrial, Automotive, Renewables, Consumer & Enterprise, Military Defense and Aerospace & Medical), By Region, Competition 2021-2031F

Forecast Period	2027-2031
Market Size (2025)	USD 520.17 Million
CAGR (2026-2031)	26.96%
Fastest Growing Segment	Power Drivers
Largest Market	North America
Market Size (2031)	USD 2178.45 Million

Market Overview

The Global GaN Power Devices Market will grow from USD 520.17 Million in 2025 to USD 2178.45 Million by 2031 at a 26.96% CAGR. Gallium Nitride power devices are wide bandgap semiconductor components that utilize high electron mobility to deliver superior energy efficiency and faster switching speeds than traditional silicon. The market is primarily propelled by the escalating demand for rapid charging solutions in consumer electronics and the rigorous power density requirements of electric vehicle powertrains. Additionally, the global expansion of renewable energy systems and the critical need for efficient power supplies in data centers serve as fundamental drivers supporting the sector trajectory.

However, the widespread adoption of these devices confronts a significant impediment regarding the higher manufacturing costs and production complexities relative to mature silicon technologies. To illustrate the industrial momentum in this sector, according to SEMI, in 2024, the global capacity for discrete semiconductors was projected to expand by 7% to reach 4.4 million wafers per month. This statistical growth highlights the tangible commitment to scaling production capabilities to meet the surging requirements of electrification and advanced power management applications.

Key Market Drivers

Escalating power efficiency requirements for hyperscale data centers and AI servers are fundamentally reshaping the Global GaN Power Devices Market. As artificial intelligence workloads demand surging computational levels, traditional silicon-based power supplies struggle to manage the associated heat and energy density constraints. GaN technology addresses this critical gap by enabling smaller, cooler, and more efficient power supply units (PSUs) necessary for modern high-performance server racks. To illustrate the technical advancements meeting these needs, according to Navitas Semiconductor, July 2024, in the 'Navitas Overcomes AI Challenges with World’s Highest Power Density Data Center Design' press release, the company unveiled a reference design achieving a record power density of 137 W/in³. This capability allows data center operators to maximize processing power within limited physical footprints while strictly adhering to energy sustainability goals.

Simultaneously, the accelerated adoption of electric vehicle powertrains acts as a primary catalyst for market expansion, pushing manufacturers to integrate GaN into onboard chargers and DC-DC converters to reduce weight and charging times. The automotive sector's shift toward 800V architectures necessitates the higher switching frequency and breakdown voltage capabilities that GaN provides over legacy materials. This strategic priority is driving significant industrial consolidation; according to Renesas Electronics Corporation, June 2024, in the 'Renesas Completes Acquisition of Transphorm' press release, the company finalized the purchase of a leading GaN provider for $339 million to bolster its automotive power portfolio. Such strategic maneuvers are indicative of the broader industry trajectory, further evidenced when, according to Vishay Intertechnology, in 2024, the firm acquired the Newport Wafer Fab for $177 million to secure essential manufacturing capacity for automotive-grade devices.

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Key Market Challenges

High manufacturing costs and intricate production processes currently act as a primary restraint on the Global GaN Power Devices Market. Unlike silicon, which benefits from decades of optimization and massive economies of scale, Gallium Nitride fabrication involves complex epitaxial growth techniques and expensive substrates that significantly elevate the cost per unit. These technical hurdles result in lower yield rates during the early stages of mass production, making the final price of GaN components considerably higher than their silicon counterparts. Consequently, price-sensitive sectors often hesitate to transition to this technology despite its performance advantages, limiting widespread adoption to high-performance applications like electric vehicles or premium consumer electronics.

The financial burden of overcoming these manufacturing barriers is evident in the substantial capital expenditure required for specialized production facilities. According to SEMI, in 2024, the power-related segment was projected to see investments of over US$30 billion through 2027, with approximately US$14 billion specifically allocated for compound semiconductor projects. This heavy investment requirement underscores the difficulty of scaling operations to a level where GaN can compete directly on price with established silicon technologies, thereby slowing its penetration into cost-critical market segments.

Key Market Trends

The transition to 200mm (8-inch) GaN-on-Silicon wafer manufacturing is emerging as a critical trend to address the cost competitiveness of Gallium Nitride against silicon. Manufacturers are actively migrating from 150mm (6-inch) processes to larger diameter wafers, which significantly increases the number of dies per wafer and lowers the unit cost of power devices. This shift is essential for scaling production volumes to meet mass-market demands beyond niche high-end applications, effectively bridging the price gap with mature silicon technologies. Demonstrating this rapid expansion in manufacturing capability, according to DigiTimes, July 2025, in the 'GaN surge: Innoscience targets 20K/month 8-inch wafer milestone by year-end' report, Innoscience plans to expand its monthly production of 8-inch wafers from 13,000 to 20,000 by the end of 2025. This capacity growth underscores the industry's strategic pivot toward larger wafer sizes to achieve the economies of scale necessary for broader market penetration.

Simultaneously, the development of GaN solutions for solar microinverters and optimizers is gaining traction as renewable energy systems prioritize higher efficiency and power density. GaN transistors are increasingly replacing silicon components in photovoltaic inverters to minimize switching losses and enable smaller, lighter form factors that are easier to install on commercial and residential rooftops. This technological integration allows for superior energy harvesting and thermal management, which are vital for optimizing the output of modern photovoltaic arrays. Highlighting this advancement, according to pv magazine USA, September 2025, in the 'Enphase introduces commercial-scale solar microinverter with 97.5% efficiency' article, Enphase Energy launched its IQ9N-3P three-phase microinverter which utilizes GaN technology to achieve a conversion efficiency of 97.5%. Such innovations validate the superior performance of GaN in demanding renewable energy applications, driving its adoption in the evolving green energy landscape.

Segmental Insights

The Power Drivers segment is anticipated to register the fastest growth within the Global GaN Power Devices Market due to its critical role in maximizing system efficiency. As industries transition toward compact and high-frequency power electronics, standard silicon drivers often fail to meet the switching speed requirements of Gallium Nitride transistors. Consequently, demand for specialized power drivers has surged to ensure reliable operation in data centers and telecommunications. This trend is further reinforced by the industry shift toward integrated power solutions, where drivers are combined with switches to improve overall device performance and reduce physical size.

Regional Insights

North America maintains a leading position in the global GaN power devices market due to extensive investments in research and development. This dominance is largely attributed to strong support from institutions like the U.S. Department of Defense and the Department of Energy, which actively promote wide bandgap semiconductor technology for efficient power management in aerospace and defense applications. Furthermore, the high concentration of established semiconductor manufacturers in the United States enables rapid technology integration into consumer electronics and automotive sectors, solidifying the region's market status.

Recent Developments

• In December 2025, onsemi signed a collaboration agreement with GlobalFoundries to develop and manufacture advanced gallium nitride power products. This partnership integrates the company’s system design and product expertise with the foundry’s state-of-the-art 200mm GaN-on-silicon process technology. The joint effort targets the production of high-performance 650V power devices specifically designed to meet the intensifying energy demands of artificial intelligence data centers, electric vehicles, and renewable energy systems. By leveraging established manufacturing capabilities, the collaboration aims to secure a robust supply chain and deliver smaller, more efficient power solutions to the global market.
• In April 2025, STMicroelectronics entered into a strategic agreement with Innoscience to jointly develop and manufacture gallium nitride power devices. This collaboration combined the European company’s expertise in design and packaging with the partner’s extensive capacity for producing 8-inch GaN-on-silicon wafers. The partnership established a flexible manufacturing model, allowing both entities to utilize each other’s front-end fabrication facilities to support global customers. The initiative focused on accelerating the commercialization of next-generation power solutions for data centers, consumer electronics, and automotive sectors, aiming to enhance energy efficiency and improve supply chain resilience for critical semiconductor components.
• In September 2024, Infineon Technologies AG announced a major technological breakthrough by producing the world's first 300-millimeter gallium nitride power wafers. The company manufactured these wafers on an integrated pilot line within its existing large-scale silicon production facility, demonstrating the scalability of GaN technology in high-volume environments. This advancement enables the production of significantly more chips per wafer compared to standard 200-millimeter processes, offering a pathway to cost parity with silicon. The innovation is expected to accelerate the adoption of GaN semiconductors in applications such as power supplies for artificial intelligence systems, solar inverters, and electric vehicle chargers.
• In June 2024, Renesas Electronics Corporation finalized the acquisition of Transphorm, Inc., a prominent supplier of gallium nitride power semiconductors. This strategic transaction allowed the acquiring company to immediately expand its portfolio with GaN-based power products and reference designs, addressing the rising demand for wide bandgap materials. By integrating these advanced technologies, the organization aimed to deliver comprehensive power solutions for electric vehicles, data centers, and industrial applications. The move was part of a broader strategy to strengthen the company’s position in the power electronics market and provide customers with efficient, high-performance energy conversion systems.

Key Market Players

• Efficient Power Conversion Corporation
• NXP Semiconductors
• GaN Systems
• Wolfspeed Inc.
• Infineon Technologies AG
• EPISTAR Corporation
• Rohm Co. Ltd.
• ON Semiconductor Corporation
• Qorvo Inc.
• MACOM Technology Solutions Holdings Inc.

By Device Type	By Voltage Range	By Application	By End User	By Region
Power Vs RF Power	<200 Volt 200-600 Volt & >600 Volt	Power Drivers Supply & Inverter & Radio Frequency	Telecommunication Industrial Automotive Renewables Consumer & Enterprise Military Defense and Aerospace & Medical	North America Europe Asia Pacific South America Middle East & Africa

Report Scope:

In this report, the Global GaN Power Devices Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:

• GaN Power Devices Market, By Device Type:

• Power Vs RF Power

• GaN Power Devices Market, By Voltage Range:

• <200 Volt
• 200-600 Volt & >600 Volt

• GaN Power Devices Market, By Application:

• Power Drivers
• Supply & Inverter & Radio Frequency

• GaN Power Devices Market, By End User:

• Telecommunication
• Industrial
• Automotive
• Renewables
• Consumer & Enterprise
• Military Defense and Aerospace & Medical

• GaN Power Devices Market, By Region:

• North America
• United States
• Canada
• Mexico
• Europe
• France
• United Kingdom
• Italy
• Germany
• Spain
• Asia Pacific
• China
• India
• Japan
• Australia
• South Korea
• South America
• Brazil
• Argentina
• Colombia
• Middle East & Africa
• South Africa
• Saudi Arabia
• UAE