Transistor Segment is Expected to Dominate the Global Gallium Nitride Semiconductor Devices Market.

Governments around the world are investing heavily in GaN research and development. This is because GaN devices have the potential to revolutionize a wide range of industries, including energy, transportation, and telecommunications.

According to TechSci Research report, “Global Gallium Nitride Semiconductor Devices Market - Industry Size, Share, Trends, Competition Forecast & Opportunities, 2028”. The Global Gallium Nitride Semiconductor Devices is anticipated to project robust growth in the forecast period with a CAGR of 5.80% through 2028. The benefits of GaN semiconductor devices over silicon devices are to blame for the market’s expansion. Electronic products such as cell phones, computers, cameras, and televisions have all been made using silicon. GaN semiconductor devices, which are 100 times quicker than silicon, now have a chance, thanks to the decrease in silicon’s capacity for innovation. GaN devices provide several benefits over silicon ones, including greater energy efficiency, reduced prices, and quicker device speeds. The semiconductor compound gallium nitride (GaN) may create devices with high output power, small physical volume, and great microwave and ultra-high frequency efficiency. Due to the depletion of oil reserves and the scarcity of energy sources, power gadgets are being optimized to save energy. Conduction and switching losses are two of the leading causes of losses in power devices; however, these losses are being reduced by employing (GaN) gallium nitride devices, which have high breakdown voltage and low conduction resistance properties, which is fueling demand for these materials. Gallium nitride (GaN) RF semiconductor devices are becoming increasingly popular, particularly for use in defense, military, and aerospace applications. This is due to the growing demand for low-cost, low-power semiconductors in the consumer electronics and automotive sectors and the wide range of GaN material properties that encourage the development of novel applications. Venture capital firms provide funding to several GaN semiconductor device makers, which aids in improving their product lines and competitiveness. GaN is increasingly in demand in 5G multi-chip modules since these networks need more energy-efficient. As a result, several semiconductor firms are working to include GaN in 5G multi-chip modules. The market is also anticipated to be driven by the rising shipments of robots worldwide. GaN is utilized for servo drives in robotics and motion control. Technology improvements and the growing requirement for automation in the production process are two reasons that are anticipated to fuel robot unit sales throughout the projected period.

Browse over xx market data Figures spread through 188 Pages and an in-depth TOC on " Global Gallium Nitride Semiconductor Devices Market"

Based on Product, the market is bifurcated into Power Semiconductor, RF Semiconductor, and Opto Semiconductor. The Opto Semiconductors segment is anticipated to dominate the Gallium Nitride Semiconductor Device Market. Opto-semiconductors are used in products such as LEDs, solar cells, photodiodes, lasers, and optoelectronics, which might be mainly responsible for this. Opto-semiconductors are used more often in the automobile industry for pulse-powered lasers, indoor and outdoor illumination, and car lights. Opto-semiconductors are thus becoming more popular in the automotive and consumer electronics sectors. Additionally, opto-semiconductors are widely employed in pulsed laser and light detection and ranging (LiDAR) applications, encouraging the segment’s growth. Based on Component, the market is bifurcated into Transistors, Power IC, Rectifier, and Others. The Transistor segment is anticipated to dominate the Gallium Nitride Semiconductor Device Market. GaN-based power transistors and devices supporting 4G technology have seen a surge in acceptance in recent years, raising demand for high-power transistors for base stations used in the telecommunications industry. Additionally, the segment growth has been supported by the growing use of GaN transistors in propulsion systems for electric and hybrid cars, such as Field Effect Transistors (FET) and Insulated Gate Bipolar Transistors (IGBT). Based on End-User, the market is bifurcated into Information & Communication Technology, Defense & Aerospace, Consumer Electronics, Healthcare, and Others. The Information & Communication Technology segment is anticipated to dominate the Gallium Nitride Semiconductor Device Market. The global deployment of Internet-of-Things (IoT) technology is a significant factor in the category growth. IoT devices require effective and economical parts that allow for a continuous flow of information. GaN-based semiconductors are anticipated to meet the criteria for IoT-enabled goods’ low power consumption and high efficiency.

Major Global Gallium Nitride Semiconductor Devices Market players are:-

• Cree, Inc.
• Efficient Power Conversion Corporation
• Fujitsu Ltd.
• GaN Systems
• Infineon Technologies AG
• NexgenPowerSystems
• NXP Semiconductor
• Qorvo, Inc.

Download Free Sample Report

Customers can also request for 10% free customization on this report.

“The growth of the market can be attributed to the advantages offered by GaN semiconductor devices over silicon devices. Silicon materials have been used for manufacturing electronic devices such as smartphones, computers, cameras, and televisions. However, the slowdown in potential innovative properties of silicon created an opportunity for GaN semiconductor devices, which are 100 times faster than silicon. The advantages offered by GaN over silicon devices include higher energy efficiency, lower costs, and faster device speed, among others.” said Mr. Karan Chechi, Research Director with TechSci Research, a research-based global management consulting firm.

Gallium Nitride Semiconductor Devices Market – Global Industry Size, Share, Trends, Opportunity, and Forecast Segmented By Product (Power Semiconductor, RF Semiconductor), By Component (Transistors, Power IC), By End-User (Consumer Electronics, Healthcare), By Region, By Competition 2018-2028 has evaluated the future growth potential of Global Gallium Nitride Semiconductor Devices Market and provides statistics and information on market structure, size, share, and future growth. The report is intended to provide cutting-edge market intelligence and help decision makers take sound investment decisions. Besides, the report also identifies and analyzes the emerging trends along with essential drivers, challenges, and opportunities present in the Global Gallium Nitride Semiconductor Devices Market.

Contact

Mr. Ken Mathews

Techsci Research LLC

420 Lexington Avenue, Suite 300,

New York, United States- 10170

Tel: +13322586602

Email: [email protected]               

Website: www.techsciresearch.com